tm october 2007 FDP20N50F / fdpf20n 50ft n-channel mosfet ?2007 fairchild semiconductor corporation FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 1 unifet tm FDP20N50F / fdpf20n50ft n-channel mosfet, frfet 500v, 20a, 0.26 ? features ?r ds(on) = 0.22 ? ( typ.)@ v gs = 10v, i d = 10a ? low gate charge ( typ. 50nc) ? low c rss ( typ. 27pf) ? fast reverse recovery switching of built-in diode ? fast switching ? 100% avalanche tested ? improve dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. to-220 fdp series g s d d g s to-220f fdpf series g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP20N50F fdpf20n50ft units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 20 20* a -continuous (t c = 100 o c) 12.9 12.9* i dm d r a i n c u r r e n t - p u l s e d (note 1) 80 80* a e as single pulsed avalanche energy (note 2) 1110 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 250 38.5 w - derate above 25 o c2.00.3w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP20N50F fdpf20n50ft units r jc thermal resistance, junction to case 0.5 3.3 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP20N50F FDP20N50F to-220 - - 50 fdpf20n50ft fdpf20n50ft to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 10a - 0.22 0.26 ? g fs forward transconductance v ds = 20v, i d = 10a (note 4) -25-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2550 3390 pf c oss output capacitance - 350 465 pf c rss reverse transfer capacitance - 27 40 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 20a v gs = 10v (note 4, 5) -5065nc q gs gate to source gate charge - 14 - nc q gd gate to drain ?miller? charge - 20 - nc t d(on) turn-on delay time v dd = 250v, i d = 20a r g = 25 ? (note 4, 5) - 45 100 ns t r turn-on rise time - 120 250 ns t d(off) turn-off delay time - 100 210 ns t f turn-off fall time - 60 130 ns i s maximum continuous drain to source diode forward current - - 20 a i sm maximum pulsed drain to source diode forward current - - 80 a v sd drain to source diode forward voltage v gs = 0v, i sd = 20a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 20a di f /dt = 100a/ s (note 4) - 154 - ns q rr reverse recovery charge - 0.5 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 5mh, i as = 20a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 20a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 20 0.3 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 80 45678 1 10 100 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 400 0255075 0.1 0.2 0.3 0.4 0.5 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 1500 3000 4500 6000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 50 0 102030405060 0 2 4 6 8 10 *note: i d = 20a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - FDP20N50F figure 9. maximum safe operating area figure 10. maximum drain current - fdpf20n50ft vs. case temperature figure 11. transient thermal response curve - FDP20N50F -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 200 800 *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c ] 110100 0.01 0.1 1 10 100 200 40 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 800 dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 0.002 t 1 p d m t 2 thermal response [ z jc ] rectangular pulse duration [sec] *notes: 1. z jc (t) = 0.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse 0.5 0.02 0.2 0.05 0.1 0.01 t 1 p dm t 2
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve - fdpf20n50ft 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.3 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 5 t 1 p dm t 2
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 8 mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 9 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 dimensions in millimeters
FDP20N50F / fdpf20n 50ft n-channel mosfet FDP20N50F / fdpf20n50ft rev. a1 www.fairchildsemi.com 10 trademarks the following are registered and unregistered tr ademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the rights of others. these specificat ions do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information for mative or in design this datasheet contains the de sign specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference information only rev. i31
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